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Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the...

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Autores principales: Wang, T., Rymaszewski, P., Barbero, M., Degerli, Y., Godiot, S., Guilloux, F., Hemperek, T., Hirono, T., Krüger, H., Liu, J., Orsini, F., Pangaud, P., Rozanov, A., Wermes, N.
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/01/C01039
http://cds.cern.ch/record/2230761
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author Wang, T.
Rymaszewski, P.
Barbero, M.
Degerli, Y.
Godiot, S.
Guilloux, F.
Hemperek, T.
Hirono, T.
Krüger, H.
Liu, J.
Orsini, F.
Pangaud, P.
Rozanov, A.
Wermes, N.
author_facet Wang, T.
Rymaszewski, P.
Barbero, M.
Degerli, Y.
Godiot, S.
Guilloux, F.
Hemperek, T.
Hirono, T.
Krüger, H.
Liu, J.
Orsini, F.
Pangaud, P.
Rozanov, A.
Wermes, N.
author_sort Wang, T.
collection CERN
description The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.
id cern-2230761
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling cern-22307612021-12-22T03:11:21Zdoi:10.1088/1748-0221/12/01/C01039http://cds.cern.ch/record/2230761engWang, T.Rymaszewski, P.Barbero, M.Degerli, Y.Godiot, S.Guilloux, F.Hemperek, T.Hirono, T.Krüger, H.Liu, J.Orsini, F.Pangaud, P.Rozanov, A.Wermes, N.Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker UpgradeDetectors and Experimental TechniquesThe recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.arXiv:1611.01206oai:cds.cern.ch:22307612016-11-03
spellingShingle Detectors and Experimental Techniques
Wang, T.
Rymaszewski, P.
Barbero, M.
Degerli, Y.
Godiot, S.
Guilloux, F.
Hemperek, T.
Hirono, T.
Krüger, H.
Liu, J.
Orsini, F.
Pangaud, P.
Rozanov, A.
Wermes, N.
Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title_full Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title_fullStr Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title_full_unstemmed Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title_short Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
title_sort development of a depleted monolithic cmos sensor in a 150 nm cmos technology for the atlas inner tracker upgrade
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/12/01/C01039
http://cds.cern.ch/record/2230761
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