Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region

This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal str...

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Detalles Bibliográficos
Autores principales: Asimakopoulos, Panagiotis, Papastergiou, Konstantinos, Bongiorno, M, Thiringer, T
Lenguaje:eng
Publicado: 2016
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1109/EPE.2016.7695453
http://cds.cern.ch/record/2231050
Descripción
Sumario:This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.

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