Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region

This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal str...

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Detalles Bibliográficos
Autores principales: Asimakopoulos, Panagiotis, Papastergiou, Konstantinos, Bongiorno, M, Thiringer, T
Lenguaje:eng
Publicado: 2016
Materias:
Engineering
Acceso en línea:https://dx.doi.org/10.1109/EPE.2016.7695453
http://cds.cern.ch/record/2231050
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author Asimakopoulos, Panagiotis
Papastergiou, Konstantinos
Bongiorno, M
Thiringer, T
author_facet Asimakopoulos, Panagiotis
Papastergiou, Konstantinos
Bongiorno, M
Thiringer, T
author_sort Asimakopoulos, Panagiotis
collection CERN
description This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.
id cern-2231050
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling cern-22310502019-09-30T06:29:59Zdoi:10.1109/EPE.2016.7695453http://cds.cern.ch/record/2231050engAsimakopoulos, PanagiotisPapastergiou, KonstantinosBongiorno, MThiringer, TCurrent Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating RegionEngineeringThis work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to a significant thermal stressing unbalance between the substrates.CERN-ACC-2016-0326oai:cds.cern.ch:22310502016-11-08
spellingShingle Engineering
Asimakopoulos, Panagiotis
Papastergiou, Konstantinos
Bongiorno, M
Thiringer, T
Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title_full Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title_fullStr Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title_full_unstemmed Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title_short Current Sharing inside a High Power IGBT Module at the Negative Temperature Coefficient Operating Region
title_sort current sharing inside a high power igbt module at the negative temperature coefficient operating region
topic Engineering
url https://dx.doi.org/10.1109/EPE.2016.7695453
http://cds.cern.ch/record/2231050
work_keys_str_mv AT asimakopoulospanagiotis currentsharinginsideahighpowerigbtmoduleatthenegativetemperaturecoefficientoperatingregion
AT papastergioukonstantinos currentsharinginsideahighpowerigbtmoduleatthenegativetemperaturecoefficientoperatingregion
AT bongiornom currentsharinginsideahighpowerigbtmoduleatthenegativetemperaturecoefficientoperatingregion
AT thiringert currentsharinginsideahighpowerigbtmoduleatthenegativetemperaturecoefficientoperatingregion

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