Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade

Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area (18....

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Autores principales: Cavallaro, Emanuele, Casanova, Raimon, Förster, Fabian, Grinstein, Sebastian, Lange, Jörn, Kramberger, Gregor, Mandić, Igor, Puigdengoles, Carles, Terzo, Stefano
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2016
Materias:
hep-ex
6: Novel high voltage and resistive CMOS sensors
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/01/C01074
http://cds.cern.ch/record/2233399
_version_ 1780952730446069760
author Cavallaro, Emanuele
Casanova, Raimon
Förster, Fabian
Grinstein, Sebastian
Lange, Jörn
Kramberger, Gregor
Mandić, Igor
Puigdengoles, Carles
Terzo, Stefano
author_facet Cavallaro, Emanuele
Casanova, Raimon
Förster, Fabian
Grinstein, Sebastian
Lange, Jörn
Kramberger, Gregor
Mandić, Igor
Puigdengoles, Carles
Terzo, Stefano
author_sort Cavallaro, Emanuele
collection CERN
description Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area (18.49 × 24.40 mm(2)) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of 2 ⋅ 10(15) 1 MeV n(eq) / cm(2).
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spelling cern-22333992021-05-03T20:22:57Z doi:10.1088/1748-0221/12/01/C01074 http://cds.cern.ch/record/2233399 eng Cavallaro, Emanuele Casanova, Raimon Förster, Fabian Grinstein, Sebastian Lange, Jörn Kramberger, Gregor Mandić, Igor Puigdengoles, Carles Terzo, Stefano Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade hep-ex 6: Novel high voltage and resistive CMOS sensors physics.ins-det Detectors and Experimental Techniques Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area (18.49 × 24.40 mm(2)) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of 2 ⋅ 10(15) 1 MeV n(eq) / cm(2). Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area ($18.49 \times 24.40 \, \mathrm{mm^2}$) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of $2 \cdot 10^{15} \, \mathrm{1\,MeV\, n_{eq} / cm^{2}}$. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2233399 JINST JINST, 01 (2017) pp. C01074 2016-11-15
spellingShingle hep-ex
6: Novel high voltage and resistive CMOS sensors
physics.ins-det
Detectors and Experimental Techniques
Cavallaro, Emanuele
Casanova, Raimon
Förster, Fabian
Grinstein, Sebastian
Lange, Jörn
Kramberger, Gregor
Mandić, Igor
Puigdengoles, Carles
Terzo, Stefano
Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title_full Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title_fullStr Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title_full_unstemmed Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title_short Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
title_sort studies of irradiated ams h35 cmos detectors for the atlas tracker upgrade
topic hep-ex
6: Novel high voltage and resistive CMOS sensors
physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/12/01/C01074
http://cds.cern.ch/record/2233399
http://cds.cern.ch/record/2233399
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AT terzostefano studiesofirradiatedamsh35cmosdetectorsfortheatlastrackerupgrade

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