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Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined...
| Autores principales: | , , , , , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
2016
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2237670 |
| Sumario: | In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures. |
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