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Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined...

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Detalles Bibliográficos
Autores principales:	F. Moscatelli, D. Passeri, G. M. Bilei, A. Morozzi, G.-F. Dalla Betta, R. Mendicino, M. Boscardin, N. Zorzi, L. Servoli, P. Maccagnani
Formato:	info:eu-repo/semantics/article
Lenguaje:	eng
Publicado:	2016
Materias:	Detectors and Experimental Techniques 7: Advanced hybrid pixel detectors
Acceso en línea:	http://cds.cern.ch/record/2237670

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