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Silicon pixel R&D for the CLIC detector

The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions an...

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Autor principal: Hynds, Daniel
Lenguaje:eng
Publicado: 2017
Materias:
Acceso en línea:https://dx.doi.org/10.22323/1.287.0049
http://cds.cern.ch/record/2238924
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author Hynds, Daniel
author_facet Hynds, Daniel
author_sort Hynds, Daniel
collection CERN
description The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50-150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 65 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs. The R&D project also includes the development of through-silicon via (TSV) technology, as well as various engineering studies involving thin mechanical structures and full-scale air-cooling tests. An overview of the R&D program for silicon detectors at CLIC will be presented.
id cern-2238924
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
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spelling cern-22389242019-09-30T06:29:59Zdoi:10.22323/1.287.0049http://cds.cern.ch/record/2238924engHynds, DanielSilicon pixel R&D for the CLIC detectorParticle Physics - ExperimentThe physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50-150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 65 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs. The R&D project also includes the development of through-silicon via (TSV) technology, as well as various engineering studies involving thin mechanical structures and full-scale air-cooling tests. An overview of the R&D program for silicon detectors at CLIC will be presented.CLICdp-Conf-2016-017oai:cds.cern.ch:22389242017
spellingShingle Particle Physics - Experiment
Hynds, Daniel
Silicon pixel R&D for the CLIC detector
title Silicon pixel R&D for the CLIC detector
title_full Silicon pixel R&D for the CLIC detector
title_fullStr Silicon pixel R&D for the CLIC detector
title_full_unstemmed Silicon pixel R&D for the CLIC detector
title_short Silicon pixel R&D for the CLIC detector
title_sort silicon pixel r&d for the clic detector
topic Particle Physics - Experiment
url https://dx.doi.org/10.22323/1.287.0049
http://cds.cern.ch/record/2238924
work_keys_str_mv AT hyndsdaniel siliconpixelrdfortheclicdetector