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Silicon pixel R&D for the CLIC detector
The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions an...
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Lenguaje: | eng |
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2017
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Acceso en línea: | https://dx.doi.org/10.22323/1.287.0049 http://cds.cern.ch/record/2238924 |
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author | Hynds, Daniel |
author_facet | Hynds, Daniel |
author_sort | Hynds, Daniel |
collection | CERN |
description | The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50-150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 65 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs. The R&D project also includes the development of through-silicon via (TSV) technology, as well as various engineering studies involving thin mechanical structures and full-scale air-cooling tests. An overview of the R&D program for silicon detectors at CLIC will be presented. |
id | cern-2238924 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2017 |
record_format | invenio |
spelling | cern-22389242019-09-30T06:29:59Zdoi:10.22323/1.287.0049http://cds.cern.ch/record/2238924engHynds, DanielSilicon pixel R&D for the CLIC detectorParticle Physics - ExperimentThe physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tracking region, both hybrid concepts and fully integrated CMOS sensors are under consideration. The feasibility of ultra-thin sensor layers is validated with Timepix3 readout ASICs bump bonded to active edge planar sensors with 50-150 μm thickness. Prototypes of CLICpix readout ASICs implemented in 65 nm CMOS technology with 25 μm pixel pitch have been produced. Hybridisation concepts have been developed for interconnecting these chips either through capacitive coupling to active HV-CMOS sensors or through bump-bonding to planar sensors. Recent R&D achievements include results from beam tests with all types of hybrid assemblies. Simulations based on Geant4 and TCAD are used to validate the experimental results and to assess and optimise the performance of various detector designs. The R&D project also includes the development of through-silicon via (TSV) technology, as well as various engineering studies involving thin mechanical structures and full-scale air-cooling tests. An overview of the R&D program for silicon detectors at CLIC will be presented.CLICdp-Conf-2016-017oai:cds.cern.ch:22389242017 |
spellingShingle | Particle Physics - Experiment Hynds, Daniel Silicon pixel R&D for the CLIC detector |
title | Silicon pixel R&D for the CLIC detector |
title_full | Silicon pixel R&D for the CLIC detector |
title_fullStr | Silicon pixel R&D for the CLIC detector |
title_full_unstemmed | Silicon pixel R&D for the CLIC detector |
title_short | Silicon pixel R&D for the CLIC detector |
title_sort | silicon pixel r&d for the clic detector |
topic | Particle Physics - Experiment |
url | https://dx.doi.org/10.22323/1.287.0049 http://cds.cern.ch/record/2238924 |
work_keys_str_mv | AT hyndsdaniel siliconpixelrdfortheclicdetector |