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Radiation Tolerant Design with 0.18-micron CMOS Technology

This thesis discusse s th e issues r elated to the us e of enclosed-gate layou t trans isto rs and guard rings in a 0.18 μ m CMOS technology in order to im prove the radiation tolerance of ASICs. The thin gate oxides of subm icron technologies ar e inherently m ore radiation tole r...

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Autor principal:	Chen, Li
Lenguaje:	eng
Publicado:	2017
Acceso en línea:	http://cds.cern.ch/record/2241167

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