High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately de...

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Detalles Bibliográficos
Autores principales: García, Marcos Fernández, Sánchez, Javier González, Echeverría, Richard Jaramillo, Moll, Michael, Santos, Raúl Montero, Moya, David, Pinto, Rogelio Palomo, Vila, Iván
Lenguaje:eng
Publicado: 2017
Materias:
XX
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2016.05.070
http://cds.cern.ch/record/2241240

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