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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests re...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2015
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/RADECS.2015.7365617 http://cds.cern.ch/record/2256768 |
| _version_ | 1780953754573471744 |
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| author | Gupta, V. Bosser, A. Tsiligiannis, G. Zadeh, A. Javanainen, A. Virtanen, A. Puchner, H. Saigne, F. Wrobel, F. Dilillo, L. |
| author_facet | Gupta, V. Bosser, A. Tsiligiannis, G. Zadeh, A. Javanainen, A. Virtanen, A. Puchner, H. Saigne, F. Wrobel, F. Dilillo, L. |
| author_sort | Gupta, V. |
| collection | CERN |
| description | The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions. |
| id | cern-2256768 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2015 |
| record_format | invenio |
| spelling | cern-22567682019-09-30T06:29:59Zdoi:10.1109/RADECS.2015.7365617http://cds.cern.ch/record/2256768engGupta, V.Bosser, A.Tsiligiannis, G.Zadeh, A.Javanainen, A.Virtanen, A.Puchner, H.Saigne, F.Wrobel, F.Dilillo, L.Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test ConditionsXXThe impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests results show a high sensitivity of this memory to heavy-ions.oai:cds.cern.ch:22567682015 |
| spellingShingle | XX Gupta, V. Bosser, A. Tsiligiannis, G. Zadeh, A. Javanainen, A. Virtanen, A. Puchner, H. Saigne, F. Wrobel, F. Dilillo, L. Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title | Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title_full | Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title_fullStr | Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title_full_unstemmed | Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title_short | Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions |
| title_sort | heavy-ion radiation impact on a 4mb fram under different test conditions |
| topic | XX |
| url | https://dx.doi.org/10.1109/RADECS.2015.7365617 http://cds.cern.ch/record/2256768 |
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