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Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of different test modes (static and dynamic) on this memory is investigated. Static test results show that the memory is prone to temporary effects occurring in the peripheral circuitry. Dynamic tests re...

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Detalles Bibliográficos
Autores principales:	Gupta, V., Bosser, A., Tsiligiannis, G., Zadeh, A., Javanainen, A., Virtanen, A., Puchner, H., Saigne, F., Wrobel, F., Dilillo, L.
Lenguaje:	eng
Publicado:	2015
Materias:	XX
Acceso en línea:	https://dx.doi.org/10.1109/RADECS.2015.7365617 http://cds.cern.ch/record/2256768

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