Cargando…
Embedded Detection and Correction of SEU Bursts in SRAM Memories Used as Radiation Detectors
SRAM memories are widely used as particle fluence detectors in high radiation environments, such as in the Radiation Monitoring System (RadMon) currently in operation in the CERN accelerator complex. Multiple Cell Upsets (MCUs), arising from micro-latchup events, are characterized by a large number...
Autores principales: | Secondo, R., Foucard, G., Danzeca, S., Losito, R., Peronnard, P., Masi, A., Brugger, M., Dusseau, L. |
---|---|
Lenguaje: | eng |
Publicado: |
2016
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1109/TNS.2016.2521485 http://cds.cern.ch/record/2256771 |
Ejemplares similares
-
Analysis and Detection of Multiple Cell Upsets in SRAM Memories Used as Particle Detectors
por: Secondo, R, et al.
Publicado: (2015) -
Qualification and Characterization of SRAM Memories Used as Radiation Sensors in the LHC
por: Danzeca, S, et al.
Publicado: (2014) -
Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit For LEO Space Applications
por: Secondo, Raffaello, et al.
Publicado: (2017) -
A high precision radiation-tolerant LVDT conditioning module
por: Masi, A, et al.
Publicado: (2014) -
Compendium of Radiation-Induced Effects for Candidate Particle Accelerator Electronics
por: Danzeca, S, et al.
Publicado: (2017)