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Plasma etching processes for CMOS devices realization
| Autor principal: | |
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| Lenguaje: | eng |
| Publicado: |
Elsevier Science
2017
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2259994 |
| _version_ | 1780953964824494080 |
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| author | Posseme, Nicolas |
| author_facet | Posseme, Nicolas |
| author_sort | Posseme, Nicolas |
| collection | CERN |
| id | cern-2259994 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2017 |
| publisher | Elsevier Science |
| record_format | invenio |
| spelling | cern-22599942021-04-21T19:16:38Zhttp://cds.cern.ch/record/2259994engPosseme, NicolasPlasma etching processes for CMOS devices realizationGeneral Theoretical PhysicsElsevier Scienceoai:cds.cern.ch:22599942017 |
| spellingShingle | General Theoretical Physics Posseme, Nicolas Plasma etching processes for CMOS devices realization |
| title | Plasma etching processes for CMOS devices realization |
| title_full | Plasma etching processes for CMOS devices realization |
| title_fullStr | Plasma etching processes for CMOS devices realization |
| title_full_unstemmed | Plasma etching processes for CMOS devices realization |
| title_short | Plasma etching processes for CMOS devices realization |
| title_sort | plasma etching processes for cmos devices realization |
| topic | General Theoretical Physics |
| url | http://cds.cern.ch/record/2259994 |
| work_keys_str_mv | AT possemenicolas plasmaetchingprocessesforcmosdevicesrealization |