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Next generation spin torque memories

This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, p...

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Detalles Bibliográficos
Autores principales: Kaushik, Brajesh Kumar, Verma, Shivam, Kulkarni, Anant Aravind, Prajapati, Sanjay
Lenguaje:eng
Publicado: Springer 2017
Materias:
Acceso en línea:https://dx.doi.org/10.1007/978-981-10-2720-8
http://cds.cern.ch/record/2262188
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author Kaushik, Brajesh Kumar
Verma, Shivam
Kulkarni, Anant Aravind
Prajapati, Sanjay
author_facet Kaushik, Brajesh Kumar
Verma, Shivam
Kulkarni, Anant Aravind
Prajapati, Sanjay
author_sort Kaushik, Brajesh Kumar
collection CERN
description This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
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institution Organización Europea para la Investigación Nuclear
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publishDate 2017
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spelling cern-22621882021-04-21T19:15:21Zdoi:10.1007/978-981-10-2720-8http://cds.cern.ch/record/2262188engKaushik, Brajesh KumarVerma, ShivamKulkarni, Anant AravindPrajapati, SanjayNext generation spin torque memoriesEngineeringThis book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.Springeroai:cds.cern.ch:22621882017
spellingShingle Engineering
Kaushik, Brajesh Kumar
Verma, Shivam
Kulkarni, Anant Aravind
Prajapati, Sanjay
Next generation spin torque memories
title Next generation spin torque memories
title_full Next generation spin torque memories
title_fullStr Next generation spin torque memories
title_full_unstemmed Next generation spin torque memories
title_short Next generation spin torque memories
title_sort next generation spin torque memories
topic Engineering
url https://dx.doi.org/10.1007/978-981-10-2720-8
http://cds.cern.ch/record/2262188
work_keys_str_mv AT kaushikbrajeshkumar nextgenerationspintorquememories
AT vermashivam nextgenerationspintorquememories
AT kulkarnianantaravind nextgenerationspintorquememories
AT prajapatisanjay nextgenerationspintorquememories