Cargando…
III-nitride based light emitting diodes and applications
The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress...
Autores principales: | Seong, Tae-Yeon, Han, Jung, Amano, Hiroshi, Morkoç, Hadis |
---|---|
Lenguaje: | eng |
Publicado: |
Springer
2017
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1007/978-981-10-3755-9 http://cds.cern.ch/record/2267296 |
Ejemplares similares
-
III-nitride based light emitting diodes and applications
por: Seong, Tae-Yeon, et al.
Publicado: (2013) -
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
por: Römer, Friedhard, et al.
Publicado: (2021) -
Silicon light-emitting diodes and lasers: photon breeding devices using dressed photons
por: Ohtsu, Motoichi
Publicado: (2016) -
On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
por: Li, Luping, et al.
Publicado: (2017) -
Proceedings of the Second OSA-IEEE (LEOS) on Picosecond Electronics and Optoelectronics
por: Leonberger, Frederick, et al.
Publicado: (1987)