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Fundamentals of semiconductor devices
Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ;...
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Lenguaje: | eng |
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Van Nostrand Reinhold
1965
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Acceso en línea: | http://cds.cern.ch/record/2270395 |
_version_ | 1780954851489873920 |
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author | Lindmayer, Joseph Wrigley, Charles Y |
author_facet | Lindmayer, Joseph Wrigley, Charles Y |
author_sort | Lindmayer, Joseph |
collection | CERN |
description | Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants. |
id | cern-2270395 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1965 |
publisher | Van Nostrand Reinhold |
record_format | invenio |
spelling | cern-22703952021-04-21T19:09:39Zhttp://cds.cern.ch/record/2270395engLindmayer, JosephWrigley, Charles YFundamentals of semiconductor devicesEngineeringSemiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.Van Nostrand Reinholdoai:cds.cern.ch:22703951965 |
spellingShingle | Engineering Lindmayer, Joseph Wrigley, Charles Y Fundamentals of semiconductor devices |
title | Fundamentals of semiconductor devices |
title_full | Fundamentals of semiconductor devices |
title_fullStr | Fundamentals of semiconductor devices |
title_full_unstemmed | Fundamentals of semiconductor devices |
title_short | Fundamentals of semiconductor devices |
title_sort | fundamentals of semiconductor devices |
topic | Engineering |
url | http://cds.cern.ch/record/2270395 |
work_keys_str_mv | AT lindmayerjoseph fundamentalsofsemiconductordevices AT wrigleycharlesy fundamentalsofsemiconductordevices |