Cargando…

Fundamentals of semiconductor devices

Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ;...

Descripción completa

Detalles Bibliográficos
Autores principales: Lindmayer, Joseph, Wrigley, Charles Y
Lenguaje:eng
Publicado: Van Nostrand Reinhold 1965
Materias:
Acceso en línea:http://cds.cern.ch/record/2270395
_version_ 1780954851489873920
author Lindmayer, Joseph
Wrigley, Charles Y
author_facet Lindmayer, Joseph
Wrigley, Charles Y
author_sort Lindmayer, Joseph
collection CERN
description Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.
id cern-2270395
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1965
publisher Van Nostrand Reinhold
record_format invenio
spelling cern-22703952021-04-21T19:09:39Zhttp://cds.cern.ch/record/2270395engLindmayer, JosephWrigley, Charles YFundamentals of semiconductor devicesEngineeringSemiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.Van Nostrand Reinholdoai:cds.cern.ch:22703951965
spellingShingle Engineering
Lindmayer, Joseph
Wrigley, Charles Y
Fundamentals of semiconductor devices
title Fundamentals of semiconductor devices
title_full Fundamentals of semiconductor devices
title_fullStr Fundamentals of semiconductor devices
title_full_unstemmed Fundamentals of semiconductor devices
title_short Fundamentals of semiconductor devices
title_sort fundamentals of semiconductor devices
topic Engineering
url http://cds.cern.ch/record/2270395
work_keys_str_mv AT lindmayerjoseph fundamentalsofsemiconductordevices
AT wrigleycharlesy fundamentalsofsemiconductordevices