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The IGBT device: physics, design and applications of the insulated gate bipolar transistor
| Autor principal: | |
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| Lenguaje: | eng |
| Publicado: |
William Andrew
2015
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2277112 |
| _version_ | 1780955285026766848 |
|---|---|
| author | Baliga, B Jayant |
| author_facet | Baliga, B Jayant |
| author_sort | Baliga, B Jayant |
| collection | CERN |
| id | cern-2277112 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2015 |
| publisher | William Andrew |
| record_format | invenio |
| spelling | cern-22771122021-04-21T19:08:01Zhttp://cds.cern.ch/record/2277112engBaliga, B JayantThe IGBT device: physics, design and applications of the insulated gate bipolar transistorEngineeringWilliam Andrewoai:cds.cern.ch:22771122015 |
| spellingShingle | Engineering Baliga, B Jayant The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title | The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title_full | The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title_fullStr | The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title_full_unstemmed | The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title_short | The IGBT device: physics, design and applications of the insulated gate bipolar transistor |
| title_sort | igbt device: physics, design and applications of the insulated gate bipolar transistor |
| topic | Engineering |
| url | http://cds.cern.ch/record/2277112 |
| work_keys_str_mv | AT baligabjayant theigbtdevicephysicsdesignandapplicationsoftheinsulatedgatebipolartransistor AT baligabjayant igbtdevicephysicsdesignandapplicationsoftheinsulatedgatebipolartransistor |