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Effect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need t...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
Elsevier Science
1997
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2278646 |