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High speed heterostructure devices
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of In...
Autores principales: | , , , , |
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Lenguaje: | eng |
Publicado: |
Elsevier Science
1994
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2278656 |
Sumario: | Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices. |
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