Cargando…

Lattice location of implanted transition metals in 3C–SiC

We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-impl...

Descripción completa

Detalles Bibliográficos
Autores principales:	Granadeiro Costa, Angelo Rafael, Wahl, Ulrich, Martins Correia, Joao, David Bosne, Eric, Amorim, Lígia, Silva, Daniel, Castro Ribeiro Da Silva, Manuel, Bharuth-Ram, Krishanlal, Da Costa Pereira, Lino Miguel
Lenguaje:	eng
Publicado:	2017
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1088/1361-6463/aa6878 http://cds.cern.ch/record/2280189

Ejemplares similares

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling
por: Silva, Daniel José, et al.
Publicado: (2013)

Lattice location of Mg in GaN: a fresh look at doping limitations
por: Wahl, Ulrich, et al.
Publicado: (2017)

Emission Channeling with Short-Lived Isotopes (EC-SLI) at CERN’s ISOLDE facility
por: Wahl, Ulrich, et al.
Publicado: (2014)

Origin of the lattice sites occupied by implanted Co in Si
por: Silva, Daniel, et al.
Publicado: (2014)

Lattice location of Fe in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Precise lattice location of substitutional and interstitial Mg in AlN
por: Amorim, Lígia Marina, et al.
Publicado: (2013)

Lattice sites of Na dopants in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2016)

Lattice location of impurities in silicon Carbide
por: Granadeiro Costa, Angelo Rafael
Publicado: (2018)

Lattice location of implanted Ag in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location study of low-fluence ion-implanted 124In in 3C-SiC
por: Costa, A. R. G., et al.
Publicado: (2019)

Lattice location of implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Direct observation of the lattice sites of implanted manganese in silicon
por: da Silva, Daniel José, et al.
Publicado: (2015)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Damage formation and recovery in Fe implanted 6H–SiC
por: Miranda, Pedro, et al.
Publicado: (2011)

Lattice location of implanted Cu in highly doped Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice sites of ion implanted Cu atoms in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Minority anion substitution by Ni in ZnO
por: Pereira, Lino Miguel da Costa, et al.
Publicado: (2013)

$\alpha$-emission channeling investigations of the lattice location of Li in Ge
por: Wahl, U, et al.
Publicado: (1996)

Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments
por: Silva, Daniel, et al.
Publicado: (2015)

A versatile apparatus for on-line emission channeling experiments
por: da Silva, Manuel Ribeiro, et al.
Publicado: (2013)

Influence of the doping on the lattice sites of Fe in Si
por: Silva, Daniel, et al.
Publicado: (2014)

Lattice site location of electrical dopant impurities in group-III nitrides
por: Amorim, Lígia
Publicado: (2017)

Lattice location study of implanted In in Ge
por: Decoster, S, et al.
Publicado: (2009)

Influence of n$^{+}$ and p$^{+}$ doping on the lattice sites of implanted Fe in Si
por: Silva, Daniel José, et al.
Publicado: (2013)

Lattice location and stability of implanted Cu in Ge
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted As in ZnO
por: Wahl, U, et al.
Publicado: (2007)

Lattice sites of implanted Fe in Si
por: Wahl, Ulrich, et al.
Publicado: (2005)

Emission channeling studies on transition-metal doped GaN and ZnO: Cation versus anion substitution
por: Da Costa Pereira, Lino Miguel, et al.
Publicado: (2014)

Mixed Zn and O substitution of Co and Mn in ZnO
por: Pereira, Lino Miguel da Costa, et al.
Publicado: (2011)

Lattice location and stability of implanted Cu in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2004)

Lattice location of transition metals in silicon by means of emission channeling
por: da Silva, Daniel José
Publicado: (2015)

Lattice sites and stability of implanted Er in FZ and CZ Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice sites of ion-implanted Li in diamond
por: Restle, M, et al.
Publicado: (1995)

Lattice location of the group V elements Sb, As, and P in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2010)

Lattice location and thermal stability of implanted Fe in ZnO
por: Rita, E, et al.
Publicado: (2004)

Lattice sites of ion-implanted Mn, Fe and Ni in 6H-SiC
por: Costa, A R G, et al.
Publicado: (2017)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Er-O clustering and its influence on the lattice sites of Er in Si
por: Wahl, U, et al.
Publicado: (2003)

Annealing behavior and lattice site location of Er implanted InGaN
por: Alves, E, et al.
Publicado: (2003)

Lattice sites and damage annealing of implanted Tm and Er in Si
por: Wahl, U, et al.
Publicado: (2003)

Cannot write session to /tmp/vufind_sessions/sess_40ro3lm3j7ko61hc3tm5dlcnmq