Cargando…
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films
The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, following dilute implantation of 57Mn (T½ = 1.5 m...
Autores principales: | Mantovan, R., Fallica, R., Mokhles Gerami, A., Mølholt, T. E., Wiemer, C., Longo, M., Gunnlaugsson, H. P., Johnston, K., Masenda, H., Naidoo, D., Ncube, M., Bharuth-Ram, K., Fanciulli, M., Gislason, H. P., Langouche, G., Ólafsson, S., Weyer, G. |
---|---|
Publicado: |
2017
|
Acceso en línea: | https://dx.doi.org/10.1038/s41598-017-08275-5 http://cds.cern.ch/record/2280772 |
Ejemplares similares
-
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films
por: Mantovan, R., et al.
Publicado: (2017) -
Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57Mn+ implanted GaN and AlN
por: Masenda, H, et al.
Publicado: (2016) -
Interstitial Fe in MgO
por: Mølholt, T E, et al.
Publicado: (2014) -
Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO
por: Mølholt, T E, et al.
Publicado: (2009) -
Sensitivity of $^{57}$Fe emission Mössbauer spectroscopy to Ar and C induced defects in ZnO
por: Bharuth-Ram, K, et al.
Publicado: (2016)