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Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to $\Ph...

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Autores principales: Centis Vignali, Matteo, Eckstein, Doris, Eichhorn, Thomas, Garutti, Erika, Junkes, Alexandra, Steinbrueck, Georg, bigskip, Institut fur Experimentalphysik, Luruper Chaussee, Hamburg, Deutsches Elektronen-Synchrotron Notkestra, e
Lenguaje:eng
Publicado: 2016
Materias:
Acceso en línea:http://cds.cern.ch/record/2284331
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author Centis Vignali, Matteo
Eckstein, Doris
Eichhorn, Thomas
Garutti, Erika
Junkes, Alexandra
Steinbrueck, Georg
bigskip
Institut fur Experimentalphysik
Luruper Chaussee
Hamburg
Deutsches Elektronen-Synchrotron Notkestra
e
Hamburg
author_facet Centis Vignali, Matteo
Eckstein, Doris
Eichhorn, Thomas
Garutti, Erika
Junkes, Alexandra
Steinbrueck, Georg
bigskip
Institut fur Experimentalphysik
Luruper Chaussee
Hamburg
Deutsches Elektronen-Synchrotron Notkestra
e
Hamburg
author_sort Centis Vignali, Matteo
collection CERN
description The high luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to $\Phi_{eq} = 2 \times 10^{16}$ cm$^{-2}$, and an ionising dose of $\approx 5$ MGy after an integrated luminosity of 3000 fb$^{-1}$. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200\,$\mu$m thick p-bulk pad diodes and strip sensors irradiated up to fluences of $\Phi_{eq} = 1.3 \times 10^{16}$ cm$^{-2}$ are shown.
id cern-2284331
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2016
record_format invenio
spelling cern-22843312019-09-30T06:29:59Zhttp://cds.cern.ch/record/2284331engCentis Vignali, MatteoEckstein, DorisEichhorn, ThomasGarutti, ErikaJunkes, AlexandraSteinbrueck, GeorgbigskipInstitut fur ExperimentalphysikLuruper ChausseeHamburgDeutsches Elektronen-Synchrotron NotkestraeHamburgCharacterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel UpgradeDetectors and Experimental TechniquesThe high luminosity upgrade of the Large Hadron Collider, foreseen for 2025, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to $\Phi_{eq} = 2 \times 10^{16}$ cm$^{-2}$, and an ionising dose of $\approx 5$ MGy after an integrated luminosity of 3000 fb$^{-1}$. Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200\,$\mu$m thick p-bulk pad diodes and strip sensors irradiated up to fluences of $\Phi_{eq} = 1.3 \times 10^{16}$ cm$^{-2}$ are shown.CMS-NOTE-2017-008CERN-CMS-NOTE-2017-008oai:cds.cern.ch:22843312016-06-06
spellingShingle Detectors and Experimental Techniques
Centis Vignali, Matteo
Eckstein, Doris
Eichhorn, Thomas
Garutti, Erika
Junkes, Alexandra
Steinbrueck, Georg
bigskip
Institut fur Experimentalphysik
Luruper Chaussee
Hamburg
Deutsches Elektronen-Synchrotron Notkestra
e
Hamburg
Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title_full Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title_fullStr Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title_full_unstemmed Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title_short Characterisation of Irradiated Thin Silicon Sensors for the CMS Phase II Pixel Upgrade
title_sort characterisation of irradiated thin silicon sensors for the cms phase ii pixel upgrade
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/2284331
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