Characterisation of Silicon Timing Detectors for the RD50 Collaboration

Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche dio...

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Detalles Bibliográficos
Autor principal: Immig, David Maximilian
Lenguaje:eng
Publicado: 2017
Materias:
Condensed Matter
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2285708
_version_ 1780955891303972864
author Immig, David Maximilian
author_facet Immig, David Maximilian
author_sort Immig, David Maximilian
collection CERN
description Increasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.
id cern-2285708
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2017
record_format invenio
spelling cern-22857082019-09-30T06:29:59Zhttp://cds.cern.ch/record/2285708engImmig, David MaximilianCharacterisation of Silicon Timing Detectors for the RD50 CollaborationCondensed MatterDetectors and Experimental TechniquesIncreasing pile-up and irradiation following with the high luminosity upgrade of the LHC, demands the development of improved semiconductor detectors. The former problem can be reduced by more precise time information, which can be obtained using a future detector based on the low gain avalanche diode (LGAD). LGADs are studied by the RD50-Collaboration, which studies the characteristics of semiconductor devices to improve these for future requirements of high energy physics. This reports is engaged with the process to characterise semiconductor detectors, specially LGADs, with capacitance-voltage and current-voltage measurements as well as transient current techniques of un- and irradiated semiconductor devices.CERN-STUDENTS-Note-2017-225oai:cds.cern.ch:22857082017-09-22
spellingShingle Condensed Matter
Detectors and Experimental Techniques
Immig, David Maximilian
Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title_full Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title_fullStr Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title_full_unstemmed Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title_short Characterisation of Silicon Timing Detectors for the RD50 Collaboration
title_sort characterisation of silicon timing detectors for the rd50 collaboration
topic Condensed Matter
Detectors and Experimental Techniques
url http://cds.cern.ch/record/2285708
work_keys_str_mv AT immigdavidmaximilian characterisationofsilicontimingdetectorsfortherd50collaboration

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