Radiation Hardness of Small-Pitch 3D Pixel Sensors up to HL-LHC Fluences

A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n...

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Detalles Bibliográficos
Autores principales: Lange, J., Grinstein, S., Manna, M., Pellegrini, G., Quirion, D., Terzo, S., Furelos, D. Vázquez
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Springer Proc. Phys. 2018
Materias:
hep-ex
Particle Physics - Experiment
physics.ins-det
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Acceso en línea:https://dx.doi.org/10.1007/978-981-13-1316-5_79
http://cds.cern.ch/record/2287521
Descripción
Sumario:A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $\mu$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.

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