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Charge collection properties of irradiated depleted CMOS pixel test structures
The edge transient-current technique (Edge-TCT) and charge-collection measurements with passive test structures made with the LFoundry 150-nm CMOS process on a p-type substrate with an initial resistivity of over 3 k Ω cm are presented. The measurements were made before and after irradiation with re...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.06.062 http://cds.cern.ch/record/2305760 |