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Investigation of modified ATLAS pixel implantations after irradiation with neutrons

The innermost part of the tracking detector of the ATLAS experiment consists mainly of planar n + -in-n silicon pixel sensors. During the phase-0 upgrade, the Insertable B-Layer (IBL) was installed closest to the beam pipe. Its pixels are arranged with a pitch of 250  μ m ×50μm with a rectangular sh...

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Autores principales: Gisen, A., Altenheiner, S., Gößling, C., Grothe, M., Klingenberg, R., Kröninger, K., Lönker, J., Weers, M., Wittig, T., Wizemann, F.
Lenguaje:eng
Publicado: 2018
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.08.030
http://cds.cern.ch/record/2305767
_version_ 1780957523614892032
author Gisen, A.
Altenheiner, S.
Gößling, C.
Grothe, M.
Klingenberg, R.
Kröninger, K.
Lönker, J.
Weers, M.
Wittig, T.
Wizemann, F.
author_facet Gisen, A.
Altenheiner, S.
Gößling, C.
Grothe, M.
Klingenberg, R.
Kröninger, K.
Lönker, J.
Weers, M.
Wittig, T.
Wizemann, F.
author_sort Gisen, A.
collection CERN
description The innermost part of the tracking detector of the ATLAS experiment consists mainly of planar n + -in-n silicon pixel sensors. During the phase-0 upgrade, the Insertable B-Layer (IBL) was installed closest to the beam pipe. Its pixels are arranged with a pitch of 250  μ m ×50μm with a rectangular shaped n + implantation. Based on this design modified pixel designs have been developed in Dortmund. Six of these new pixel designs are arranged in structures of ten columns and were placed beside structures with the standard design on one sensor. Because of a special guard ring design, each structure can be powered and investigated separately. Several of these sensors were bump bonded to FE-I4 read-out chips. One of these modules was irradiated with reactor neutrons up to a fluence of 5×1015neqcm−2 . This contribution presents important sensor characteristics, charge collection determined with radioactive sources and hit efficiency measurements, performed in laboratory and test beam, of this irradiated device. It is shown that the new modified designs perform similar or better than the IBL standard design in terms of charge collection and tracking efficiency, at the cost of a slightly increased leakage current.
id cern-2305767
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling cern-23057672023-03-14T16:32:02Zdoi:10.1016/j.nima.2018.08.030http://cds.cern.ch/record/2305767engGisen, A.Altenheiner, S.Gößling, C.Grothe, M.Klingenberg, R.Kröninger, K.Lönker, J.Weers, M.Wittig, T.Wizemann, F.Investigation of modified ATLAS pixel implantations after irradiation with neutronsphysics.ins-detDetectors and Experimental TechniquesThe innermost part of the tracking detector of the ATLAS experiment consists mainly of planar n + -in-n silicon pixel sensors. During the phase-0 upgrade, the Insertable B-Layer (IBL) was installed closest to the beam pipe. Its pixels are arranged with a pitch of 250  μ m ×50μm with a rectangular shaped n + implantation. Based on this design modified pixel designs have been developed in Dortmund. Six of these new pixel designs are arranged in structures of ten columns and were placed beside structures with the standard design on one sensor. Because of a special guard ring design, each structure can be powered and investigated separately. Several of these sensors were bump bonded to FE-I4 read-out chips. One of these modules was irradiated with reactor neutrons up to a fluence of 5×1015neqcm−2 . This contribution presents important sensor characteristics, charge collection determined with radioactive sources and hit efficiency measurements, performed in laboratory and test beam, of this irradiated device. It is shown that the new modified designs perform similar or better than the IBL standard design in terms of charge collection and tracking efficiency, at the cost of a slightly increased leakage current.The innermost part of the tracking detector of the ATLAS experiment consists mainly of planar n$^+$-in-n silicon pixel sensors. During the phase-0 upgrade, the Insertable B-Layer (IBL) was installed closest to the beam pipe. Its pixels are arranged with a pitch of $250\,\mu$m$\,\times\,50\,\mu$m with a rectangular shaped n$^+$ implantation. Based on this design modified pixel designs have been developed in Dortmund. Six of these new pixel designs are arranged in structures of ten columns and were placed beside structures with the standard design on one sensor. Because of a special guard ring design, each structure can be powered and investigated separately. Several of these sensors were bump bonded to FE-I4 read-out chips. One of these modules was irradiated with reactor neutrons up to a fluence of $5 \times 10^{15} \, n_{\text{eq}}\text{cm}^{-2}$. This contribution presents important sensor characteristics, charge collection determined with radioactive sources and hit efficiency measurements, performed in laboratory and test beam, of this irradiated device. It is shown that the new modified designs perform similar or better than the IBL standard design in terms of charge collection and tracking efficiency, at the cost of a slightly increased leakage current.arXiv:1802.00660oai:cds.cern.ch:23057672018-02-02
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Gisen, A.
Altenheiner, S.
Gößling, C.
Grothe, M.
Klingenberg, R.
Kröninger, K.
Lönker, J.
Weers, M.
Wittig, T.
Wizemann, F.
Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title_full Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title_fullStr Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title_full_unstemmed Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title_short Investigation of modified ATLAS pixel implantations after irradiation with neutrons
title_sort investigation of modified atlas pixel implantations after irradiation with neutrons
topic physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2018.08.030
http://cds.cern.ch/record/2305767
work_keys_str_mv AT gisena investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT altenheiners investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT goßlingc investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT grothem investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT klingenbergr investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT kroningerk investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT lonkerj investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT weersm investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT wittigt investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons
AT wizemannf investigationofmodifiedatlaspixelimplantationsafterirradiationwithneutrons