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Test-beam results of a SOI pixel detector prototype
This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μμm thick high-resistivity float-zone n-type (FZ-n) wafer....
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.06.017 http://cds.cern.ch/record/2310056 |
| _version_ | 1780957800596242432 |
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| author | Bugiel, Roma Bugiel, Szymon Dannheim, Dominik Fiergolski, Adrian Hynds, Daniel Idzik, Marek Kapusta, P Kucewicz, Wojciech Munker, Ruth Magdalena Nurnberg, Andreas Matthias |
| author_facet | Bugiel, Roma Bugiel, Szymon Dannheim, Dominik Fiergolski, Adrian Hynds, Daniel Idzik, Marek Kapusta, P Kucewicz, Wojciech Munker, Ruth Magdalena Nurnberg, Andreas Matthias |
| author_sort | Bugiel, Roma |
| collection | CERN |
| description | This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μμm thick high-resistivity float-zone n-type (FZ-n) wafer. The pixel size is 30 $\mu$m $\times$ 30 $\mu$m and its readout uses a source-follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and $\eta$-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 $\mu$m. |
| id | cern-2310056 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2018 |
| record_format | invenio |
| spelling | cern-23100562022-08-10T12:29:58Zdoi:10.1016/j.nima.2018.06.017http://cds.cern.ch/record/2310056engBugiel, RomaBugiel, SzymonDannheim, DominikFiergolski, AdrianHynds, DanielIdzik, MarekKapusta, PKucewicz, WojciechMunker, Ruth MagdalenaNurnberg, Andreas MatthiasTest-beam results of a SOI pixel detector prototypeParticle Physics - ExperimentDetectors and Experimental TechniquesThis paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μμm thick high-resistivity float-zone n-type (FZ-n) wafer. The pixel size is 30 $\mu$m $\times$ 30 $\mu$m and its readout uses a source-follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and $\eta$-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 $\mu$m.CLICdp-Pub-2018-001oai:cds.cern.ch:23100562018 |
| spellingShingle | Particle Physics - Experiment Detectors and Experimental Techniques Bugiel, Roma Bugiel, Szymon Dannheim, Dominik Fiergolski, Adrian Hynds, Daniel Idzik, Marek Kapusta, P Kucewicz, Wojciech Munker, Ruth Magdalena Nurnberg, Andreas Matthias Test-beam results of a SOI pixel detector prototype |
| title | Test-beam results of a SOI pixel detector prototype |
| title_full | Test-beam results of a SOI pixel detector prototype |
| title_fullStr | Test-beam results of a SOI pixel detector prototype |
| title_full_unstemmed | Test-beam results of a SOI pixel detector prototype |
| title_short | Test-beam results of a SOI pixel detector prototype |
| title_sort | test-beam results of a soi pixel detector prototype |
| topic | Particle Physics - Experiment Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/j.nima.2018.06.017 http://cds.cern.ch/record/2310056 |
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