Test-beam results of a SOI pixel detector prototype

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μμm thick high-resistivity float-zone n-type (FZ-n) wafer....

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Detalles Bibliográficos
Autores principales: Bugiel, Roma, Bugiel, Szymon, Dannheim, Dominik, Fiergolski, Adrian, Hynds, Daniel, Idzik, Marek, Kapusta, P, Kucewicz, Wojciech, Munker, Ruth Magdalena, Nurnberg, Andreas Matthias
Lenguaje:eng
Publicado: 2018
Materias:
Particle Physics - Experiment
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.06.017
http://cds.cern.ch/record/2310056

Internet

https://dx.doi.org/10.1016/j.nima.2018.06.017
http://cds.cern.ch/record/2310056

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