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Test-beam results of a SOI pixel detector prototype
This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μμm thick high-resistivity float-zone n-type (FZ-n) wafer....
Autores principales: | Bugiel, Roma, Bugiel, Szymon, Dannheim, Dominik, Fiergolski, Adrian, Hynds, Daniel, Idzik, Marek, Kapusta, P, Kucewicz, Wojciech, Munker, Ruth Magdalena, Nurnberg, Andreas Matthias |
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Lenguaje: | eng |
Publicado: |
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.06.017 http://cds.cern.ch/record/2310056 |
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