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Ionizing Radiation Effects on the Noise of 65 nm CMOS Transistors for Pixel Sensor Readout at Extreme Total Dose Levels
This paper is focused on the study of the noise performance of 65 nm CMOS transistors at extremely high total ionizing dose (TID) levels of the order of several hundreds of Mrad(SiO2). Noise measurements are reported and discussed, analyzing radiation effects on 1/ f noise and channel thermal noise....
| Autores principales: | , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
IEEE Trans. Nucl. Sci.
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2017.2777741 http://cds.cern.ch/record/2310978 |