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Field effect transistor applications

Detalles Bibliográficos
Autor principal: Gosling, William
Lenguaje:eng
Publicado: Temple Press 1964
Materias:
Acceso en línea:http://cds.cern.ch/record/231474
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author Gosling, William
author_facet Gosling, William
author_sort Gosling, William
collection CERN
id cern-231474
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1964
publisher Temple Press
record_format invenio
spelling cern-2314742021-04-22T04:15:17Zhttp://cds.cern.ch/record/231474engGosling, WilliamField effect transistor applicationsEngineeringTemple Pressoai:cds.cern.ch:2314741964
spellingShingle Engineering
Gosling, William
Field effect transistor applications
title Field effect transistor applications
title_full Field effect transistor applications
title_fullStr Field effect transistor applications
title_full_unstemmed Field effect transistor applications
title_short Field effect transistor applications
title_sort field effect transistor applications
topic Engineering
url http://cds.cern.ch/record/231474
work_keys_str_mv AT goslingwilliam fieldeffecttransistorapplications