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CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles

The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granulari...

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Autores principales: Guilloux, F., Balli, F., Degerli, Y., Elhosni, M., Guyot, C., Hemperek, T., Lachkar, M., Meyer, JP., Ouraou, A., Schwemling, P., Vandenbroucke, M.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: PoS 2018
Materias:
Acceso en línea:http://cds.cern.ch/record/2318322
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author Guilloux, F.
Balli, F.
Degerli, Y.
Elhosni, M.
Guyot, C.
Hemperek, T.
Lachkar, M.
Meyer, JP.
Ouraou, A.
Schwemling, P.
Vandenbroucke, M.
author_facet Guilloux, F.
Balli, F.
Degerli, Y.
Elhosni, M.
Guyot, C.
Hemperek, T.
Lachkar, M.
Meyer, JP.
Ouraou, A.
Schwemling, P.
Vandenbroucke, M.
author_sort Guilloux, F.
collection CERN
description The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC.
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spelling cern-23183222019-09-30T06:29:59Z http://cds.cern.ch/record/2318322 eng Guilloux, F. Balli, F. Degerli, Y. Elhosni, M. Guyot, C. Hemperek, T. Lachkar, M. Meyer, JP. Ouraou, A. Schwemling, P. Vandenbroucke, M. CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2318322 PoS PoS, (2018) pp. 023 2018
spellingShingle Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Guilloux, F.
Balli, F.
Degerli, Y.
Elhosni, M.
Guyot, C.
Hemperek, T.
Lachkar, M.
Meyer, JP.
Ouraou, A.
Schwemling, P.
Vandenbroucke, M.
CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title_full CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title_fullStr CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title_full_unstemmed CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title_short CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
title_sort cactμs: high-voltage cmos monolithic active pixel sensor for tracking and time tagging of charged particles
topic Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
url http://cds.cern.ch/record/2318322
http://cds.cern.ch/record/2318322
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