Cargando…
CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles
The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granulari...
Autores principales: | , , , , , , , , , , |
---|---|
Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
Publicado: |
PoS
2018
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2318322 |
_version_ | 1780958378186506240 |
---|---|
author | Guilloux, F. Balli, F. Degerli, Y. Elhosni, M. Guyot, C. Hemperek, T. Lachkar, M. Meyer, JP. Ouraou, A. Schwemling, P. Vandenbroucke, M. |
author_facet | Guilloux, F. Balli, F. Degerli, Y. Elhosni, M. Guyot, C. Hemperek, T. Lachkar, M. Meyer, JP. Ouraou, A. Schwemling, P. Vandenbroucke, M. |
author_sort | Guilloux, F. |
collection | CERN |
description | The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC. |
format | info:eu-repo/semantics/article |
id | cern-2318322 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
publisher | PoS |
record_format | invenio |
spelling | cern-23183222019-09-30T06:29:59Z http://cds.cern.ch/record/2318322 eng Guilloux, F. Balli, F. Degerli, Y. Elhosni, M. Guyot, C. Hemperek, T. Lachkar, M. Meyer, JP. Ouraou, A. Schwemling, P. Vandenbroucke, M. CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2318322 PoS PoS, (2018) pp. 023 2018 |
spellingShingle | Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors Guilloux, F. Balli, F. Degerli, Y. Elhosni, M. Guyot, C. Hemperek, T. Lachkar, M. Meyer, JP. Ouraou, A. Schwemling, P. Vandenbroucke, M. CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title_full | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title_fullStr | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title_full_unstemmed | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title_short | CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles |
title_sort | cactμs: high-voltage cmos monolithic active pixel sensor for tracking and time tagging of charged particles |
topic | Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors |
url | http://cds.cern.ch/record/2318322 http://cds.cern.ch/record/2318322 |
work_keys_str_mv | AT guillouxf cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT ballif cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT degerliy cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT elhosnim cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT guyotc cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT hemperekt cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT lachkarm cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT meyerjp cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT ouraoua cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT schwemlingp cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles AT vandenbrouckem cactmshighvoltagecmosmonolithicactivepixelsensorfortrackingandtimetaggingofchargedparticles |