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Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

Detalles Bibliográficos
Autores principales: Jensen, B N, Møller, S P, Uggerhøj, Erik, Worm, T, Atherton, Henry W, Clément, M, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Jeanneret, J B, Hage-Ali, M, Siffert, P
Lenguaje:eng
Publicado: 1992
Materias:
Acceso en línea:https://dx.doi.org/10.1016/0168-583X(92)95316-J
http://cds.cern.ch/record/236709
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author Jensen, B N
Møller, S P
Uggerhøj, Erik
Worm, T
Atherton, Henry W
Clément, M
Doble, Niels T
Elsener, K
Gatignon, L
Grafström, P
Jeanneret, J B
Hage-Ali, M
Siffert, P
author_facet Jensen, B N
Møller, S P
Uggerhøj, Erik
Worm, T
Atherton, Henry W
Clément, M
Doble, Niels T
Elsener, K
Gatignon, L
Grafström, P
Jeanneret, J B
Hage-Ali, M
Siffert, P
author_sort Jensen, B N
collection CERN
id cern-236709
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1992
record_format invenio
spelling cern-2367092023-05-05T12:57:01Zdoi:10.1016/0168-583X(92)95316-Jhttp://cds.cern.ch/record/236709engJensen, B NMøller, S PUggerhøj, ErikWorm, TAtherton, Henry WClément, MDoble, Niels TElsener, KGatignon, LGrafström, PJeanneret, J BHage-Ali, MSiffert, PDeflection of 450 GeV protons by planar channeling in a bent silicon crystalAccelerators and Storage RingsCERN-SL-92-14-EAoai:cds.cern.ch:2367091992-03-10
spellingShingle Accelerators and Storage Rings
Jensen, B N
Møller, S P
Uggerhøj, Erik
Worm, T
Atherton, Henry W
Clément, M
Doble, Niels T
Elsener, K
Gatignon, L
Grafström, P
Jeanneret, J B
Hage-Ali, M
Siffert, P
Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title_full Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title_fullStr Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title_full_unstemmed Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title_short Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
title_sort deflection of 450 gev protons by planar channeling in a bent silicon crystal
topic Accelerators and Storage Rings
url https://dx.doi.org/10.1016/0168-583X(92)95316-J
http://cds.cern.ch/record/236709
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