Deflection of 450 GeV protons by planar channeling in a bent silicon crystal

Detalles Bibliográficos
Autores principales: Jensen, B N, Møller, S P, Uggerhøj, Erik, Worm, T, Atherton, Henry W, Clément, M, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Jeanneret, J B, Hage-Ali, M, Siffert, P
Lenguaje:eng
Publicado: 1992
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1016/0168-583X(92)95316-J
http://cds.cern.ch/record/236709

Internet

https://dx.doi.org/10.1016/0168-583X(92)95316-J
http://cds.cern.ch/record/236709

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