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Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1992
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/245571 |
| _version_ | 1780885205143257088 |
|---|---|
| author | Lemeilleur, F Glaser, M Heijne, Erik H M Jarron, Pierre Occelli, E Rioux, J |
| author_facet | Lemeilleur, F Glaser, M Heijne, Erik H M Jarron, Pierre Occelli, E Rioux, J |
| author_sort | Lemeilleur, F |
| collection | CERN |
| id | cern-245571 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1992 |
| record_format | invenio |
| spelling | cern-2455712019-09-30T06:29:59Zhttp://cds.cern.ch/record/245571engLemeilleur, FGlaser, MHeijne, Erik H MJarron, PierreOccelli, ERioux, JElectrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectorsDetectors and Experimental TechniquesCERN-ECP-92-012CERN-ECP-92-12oai:cds.cern.ch:2455711992-09-04 |
| spellingShingle | Detectors and Experimental Techniques Lemeilleur, F Glaser, M Heijne, Erik H M Jarron, Pierre Occelli, E Rioux, J Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title | Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title_full | Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title_fullStr | Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title_full_unstemmed | Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title_short | Electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| title_sort | electrical properties and charge collection efficiency for neutron-irradiated p-type and n-type silicon detectors |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/245571 |
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