Cargando…
Neutron irradiation of silicon diodes at temperatures of + 20$^0$C and - 20$^0$C
Autores principales: | Anghinolfi, Francis, Bardos, R A, Bates, S, Bonino, R, Clark, A G, Claussen, N, Fretwurst, E, Glaser, M, Gorfine, G W, Gössling, C, Heijne, Erik H M, Jarron, Pierre, Klingenberg, R, Lemeilleur, F, Lindström, G, Moorhead, G F, Munday, D J, Occelli, E, Pagel, H, Papendick, B, Parker, M A, Pollmann, D, Poppleton, Alan, Rolf, A, Scampoli, P, Schulz, T, Taylor, G, Tovey, Stuart N, Weidberg, A R, Wu, X, Wunstorf, R |
---|---|
Lenguaje: | eng |
Publicado: |
1993
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/250654 |
Ejemplares similares
-
Study of characteristics of silicon detectors irradiated with 24 GeV/c protons between -20$^0$C and +20$^0$C
por: Lemeilleur, F, et al.
Publicado: (1994) -
The design and function of a radiation tolerant silicon tracker for an LHC experiment
por: Bates, S, et al.
Publicado: (1993) -
C♯ 2.0: practical guide for programmers
por: Champlain, Michel de, et al.
Publicado: (2005) -
Recent results of radiation damage studies in silicon
por: Bates, S, et al.
Publicado: (1994) -
Essential C# 2.0
por: Michaelis, Mark
Publicado: (2006)