Cargando…
Observation of high deflection efficiency and narrow energy loss distributions for 450 GeV protons channeled in a bent silicon crystal
Autores principales: | Møller, S P, Worm, T, Clément, M, Doble, Niels T, Elsener, K, Gatignon, L, Grafström, P, Uggerhøj, Erik, Hage-Ali, M, Siffert, P |
---|---|
Lenguaje: | eng |
Publicado: |
1993
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/252225 |
Ejemplares similares
-
Deflection of 450 GeV protons by planar channeling in a bent silicon crystal
por: Jensen, B N, et al.
Publicado: (1992) -
High efficiency beam deflection by planar channeling in bent silicon crystals
por: Elsener, K, et al.
Publicado: (1993) -
Deflection of high energy beams by channeling in bent silicon crystals
por: Elsener, K, et al.
Publicado: (1994) -
Deflection of 200 GeV/c and 450 GeV/c Positively Charged Particles in a Bent Germanium Crystal
por: Biino, C, et al.
Publicado: (1997) -
The Influence of Radiation Damage on the Deflection of High-Energy Beams in Bent Silicon Crystals
por: Biino, C, et al.
Publicado: (1996)