Cargando…

Vacancy-acceptor complexes in germanium produced by ion implantation

Detalles Bibliográficos
Autores principales:	Feuser, U, Vianden, R, Alves, E, Da Silva, M F A, Szilágyi, E, Pászti, F, Soares, J C
Lenguaje:	eng
Publicado:	1991
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1016/0168-583X(91)95762-3 http://cds.cern.ch/record/253444

Ejemplares similares

Radiation damage annealing of Hg implanted InP
por: Correia, J G, et al.
Publicado: (1995)

Ion implantation of Cd and Ag into AlN and GaN
por: Miranda, Sérgio M C, et al.
Publicado: (2012)

Diluted manganese on the bond-centered site in germanium
por: Decoster, S, et al.
Publicado: (2010)

Lattice location and optical activation of rare earth implanted GaN
por: Wahl, U, et al.
Publicado: (2003)

Cd doping of AlN via ion implantation studied with perturbed angular correlation
por: Kessler, Patrick, et al.
Publicado: (2012)

Lattice site and thermal stability of transition metals in germanium
por: Augustyns, Valérie
Publicado: (2013)

Evidence for vacancy percolation in highly-doped silicon
por: Müller, E, et al.
Publicado: (1995)

Acceptor correlated centers in II-VI compounds
por: Reinhold, B, et al.
Publicado: (1998)

Lattice location of implanted As in ZnO
por: Wahl, U, et al.
Publicado: (2007)

Erbium implantation in Strontium Titanate
por: Araújo, J P, et al.
Publicado: (2001)

Acceptor-hydrogen interaction in InAs
por: Burchard, A, et al.
Publicado: (1997)

Low temperature epitaxial regrowth of mercury implanted sapphire
por: Alves, E, et al.
Publicado: (1996)

Implantation of cobalt in SnO2 thin films studied by TDPAC
por: Schell, Juliana, et al.
Publicado: (2017)

Annealing of ion-implanted GaN
por: Burchard, A, et al.
Publicado: (1999)

Semiconductors with structurally determined vacancies: PAC studies
por: Dietrich, M, et al.
Publicado: (1999)

Lattice sites of ion implanted Cu atoms in diamond
por: Bharuth-Ram, K, et al.
Publicado: (2003)

Lattice sites of ion-implanted Li in diamond
por: Restle, M, et al.
Publicado: (1995)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice site and stability of implanted Ag in ZnO
por: Rita, E, et al.
Publicado: (2003)

9th International Conference on Ion-implantation Technology
por: Clark, S, et al.
Publicado: (1993)

Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals
por: Rita, E, et al.
Publicado: (2003)

Lattice location and stability of implanted Cu in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2004)

Electric field gradients of acceptor-donor pairs in semiconductors
por: Burchard, A, et al.
Publicado: (1999)

Lattice location and thermal stability of implanted Fe in ZnO
por: Rita, E, et al.
Publicado: (2004)

Lattice sites of implanted Cu and Ag in ZnO
por: Wahl, Ulrich, et al.
Publicado: (2005)

Lattice location study of ion implanted Sn and Sn-related defects in Ge
por: Decoster, S, et al.
Publicado: (2010)

Identification of Ag-acceptors in $^{111}\!$Ag $^{111}\!$Cd doped ZnTe and CdTe
por: Hamann, J, et al.
Publicado: (2000)

Identification of Ag-acceptors in $^{111}Ag^{111}Cd$ doped ZnTe and CdTe
por: Hamann, J, et al.
Publicado: (2000)

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
por: Ronning, C R, et al.
Publicado: (2000)

Stability studies of Hg implanted YBa$_{2}$Cu$_{3}$O$_{6+x}$
por: Araújo, J P, et al.
Publicado: (1998)

Stability and diffusion of Hg implanted YBa$_{2}$Cu$_{3}$O$_{6+x}$
por: Araújo, J P, et al.
Publicado: (1998)

Implantation site of rare earths in single-crystalline ZnO
por: Wahl, U, et al.
Publicado: (2003)

PAC studies of implanted $^{111}\!$Ag in single-crystalline ZnO
por: Rita, E, et al.
Publicado: (2005)

Lattice location and stability of implanted Cu in Ge
por: Wahl, U, et al.
Publicado: (2003)

Electric-field gradients at the $^{111}In$ and $^{111m}Cd$ sites in undoped and Mg-doped $LiNbO_{3}$
por: Hauer, B, et al.
Publicado: (1994)

Amorphization of ZnSe by ion implantation at low temperatures
por: Jahn, S G, et al.
Publicado: (1995)

Identification of Ag-acceptor related photoluminescence in $^{111}\!$Ag doped CdTe
por: Hamann, J, et al.
Publicado: (1998)

E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics
por: Lindner, Jörg K N, et al.
Publicado: (1999)

Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO$_{3}$
por: Kling, A, et al.
Publicado: (1995)

Annealing behavior and lattice site location of Er implanted InGaN
por: Alves, E, et al.
Publicado: (2003)

Cannot write session to /tmp/vufind_sessions/sess_jfi7bud0ocbs5hib97aarjbv1j