Annealing behaviour of InP and GaP during and after heavy-ion implantation at different temperatures and doses

Detalles Bibliográficos
Autores principales: Jahn, S G, Wahl, U, Hofsäss, H C, Winter, S, Restle, M, Recknagel, E
Lenguaje:eng
Publicado: 1993
Materias:
Other Fields of Physics
Acceso en línea:http://cds.cern.ch/record/253580

Internet

http://cds.cern.ch/record/253580

Ejemplares similares