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Annealing behaviour of InP and GaP during and after heavy-ion implantation at different temperatures and doses

Detalles Bibliográficos
Autores principales:	Jahn, S G, Wahl, U, Hofsäss, H C, Winter, S, Restle, M, Recknagel, E
Lenguaje:	eng
Publicado:	1993
Materias:	Other Fields of Physics
Acceso en línea:	http://cds.cern.ch/record/253580

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