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First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC
A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a t...
| Autores principales: | , , , , , , , , , , , , , , , , |
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| Formato: | info:eu-repo/semantics/article |
| Lenguaje: | eng |
| Publicado: |
NIM A
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2019.04.037 http://cds.cern.ch/record/2622152 |
| _version_ | 1780958571145461760 |
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| author | Currás, E. Duarte-Campderrós, J. Fernández, M. García, A. Gómez, G. González, J. Jaramillo, R. Moya, D. Vila, I. Hidalgo, S. Manna, M. Pellegrini, G. Quirion, D. Pitzl, D. Ebrahimi, A. Rohe, T. Wiederkehr, S. |
| author_facet | Currás, E. Duarte-Campderrós, J. Fernández, M. García, A. Gómez, G. González, J. Jaramillo, R. Moya, D. Vila, I. Hidalgo, S. Manna, M. Pellegrini, G. Quirion, D. Pitzl, D. Ebrahimi, A. Rohe, T. Wiederkehr, S. |
| author_sort | Currás, E. |
| collection | CERN |
| description | A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles. |
| format | info:eu-repo/semantics/article |
| id | cern-2622152 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2018 |
| publisher | NIM A |
| record_format | invenio |
| spelling | cern-26221522019-09-30T06:29:59Z doi:10.1016/j.nima.2019.04.037 http://cds.cern.ch/record/2622152 eng Currás, E. Duarte-Campderrós, J. Fernández, M. García, A. Gómez, G. González, J. Jaramillo, R. Moya, D. Vila, I. Hidalgo, S. Manna, M. Pellegrini, G. Quirion, D. Pitzl, D. Ebrahimi, A. Rohe, T. Wiederkehr, S. First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC Detectors and Experimental Techniques 7: Advanced hybrid pixel detectors A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles. A study of 3D pixel sensors of cell size 50μm×50μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles. A study of 3D pixel sensors of cell size 50 {\mu}m x 50 {\mu}m fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles. info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2622152 NIM A NIM A, () pp. 2018-06-07 |
| spellingShingle | Detectors and Experimental Techniques 7: Advanced hybrid pixel detectors Currás, E. Duarte-Campderrós, J. Fernández, M. García, A. Gómez, G. González, J. Jaramillo, R. Moya, D. Vila, I. Hidalgo, S. Manna, M. Pellegrini, G. Quirion, D. Pitzl, D. Ebrahimi, A. Rohe, T. Wiederkehr, S. First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title | First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title_full | First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title_fullStr | First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title_full_unstemmed | First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title_short | First study of small-cell 3D Silicon Pixel Detectors for the High Luminosity LHC |
| title_sort | first study of small-cell 3d silicon pixel detectors for the high luminosity lhc |
| topic | Detectors and Experimental Techniques 7: Advanced hybrid pixel detectors |
| url | https://dx.doi.org/10.1016/j.nima.2019.04.037 http://cds.cern.ch/record/2622152 http://cds.cern.ch/record/2622152 |
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