Gain and time resolution of 45 μm thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 1015 neq/cm2

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplica- tion layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 4...

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Detalles Bibliográficos
Autores principales: Lange, J., Carulla, M., Cavallaro, E., Chytka, L., Davis, P.M., Flores, D., Förster, F., Grinstein, S., Hidalgo, S., Komarek, T., Kramberger, G., Mandić, I., Merlos, A., Nozka, L., Pellegrini, G., Quirion, D., Sykora, T.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: JINST 2017
Materias:
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/12/05/P05003
http://cds.cern.ch/record/2623664

Internet

https://dx.doi.org/10.1088/1748-0221/12/05/P05003
http://cds.cern.ch/record/2623664

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