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Lattice location of impurities in silicon Carbide
The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them...
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| Lenguaje: | eng |
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2018
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| Acceso en línea: | http://cds.cern.ch/record/2624048 |