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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , |
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Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
Publicado: |
Nucl. Instrum. Methods Phys. Res., A
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.11.009 http://cds.cern.ch/record/2624790 |
Sumario: | This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays). |
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