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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , |
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Formato: | info:eu-repo/semantics/article |
Lenguaje: | eng |
Publicado: |
Nucl. Instrum. Methods Phys. Res., A
2018
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.11.009 http://cds.cern.ch/record/2624790 |
_version_ | 1780958764717834240 |
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author | Iguaz, F.J. Balli, F. Barbero, M. Bhat, S. Breugnon, P. Caicedo, I. Chen, Z. Degerli, Y. Godiot, S. Guilloux, F. Guyot, C. Hemperek, T. Hirono, T. Krüger, H. Meyer, J.P. Ouraou, A. Pangaud, P. Rymaszewski, P. Schwemling, P. Vandenbroucke, M. Wang, T. Wermes, N. |
author_facet | Iguaz, F.J. Balli, F. Barbero, M. Bhat, S. Breugnon, P. Caicedo, I. Chen, Z. Degerli, Y. Godiot, S. Guilloux, F. Guyot, C. Hemperek, T. Hirono, T. Krüger, H. Meyer, J.P. Ouraou, A. Pangaud, P. Rymaszewski, P. Schwemling, P. Vandenbroucke, M. Wang, T. Wermes, N. |
author_sort | Iguaz, F.J. |
collection | CERN |
description | This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays). |
format | info:eu-repo/semantics/article |
id | cern-2624790 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2018 |
publisher | Nucl. Instrum. Methods Phys. Res., A |
record_format | invenio |
spelling | cern-26247902023-04-11T02:40:33Z doi:10.1016/j.nima.2018.11.009 http://cds.cern.ch/record/2624790 eng Iguaz, F.J. Balli, F. Barbero, M. Bhat, S. Breugnon, P. Caicedo, I. Chen, Z. Degerli, Y. Godiot, S. Guilloux, F. Guyot, C. Hemperek, T. Hirono, T. Krüger, H. Meyer, J.P. Ouraou, A. Pangaud, P. Rymaszewski, P. Schwemling, P. Vandenbroucke, M. Wang, T. Wermes, N. Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade physics.ins-det Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays). This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays). info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2624790 Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A, (2019) pp. 652-653 2018-06-12 |
spellingShingle | physics.ins-det Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors Iguaz, F.J. Balli, F. Barbero, M. Bhat, S. Breugnon, P. Caicedo, I. Chen, Z. Degerli, Y. Godiot, S. Guilloux, F. Guyot, C. Hemperek, T. Hirono, T. Krüger, H. Meyer, J.P. Ouraou, A. Pangaud, P. Rymaszewski, P. Schwemling, P. Vandenbroucke, M. Wang, T. Wermes, N. Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title_full | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title_fullStr | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title_full_unstemmed | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title_short | Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade |
title_sort | characterization of a depleted monolithic pixel sensors in 150 nm cmos technology for the atlas inner tracker upgrade |
topic | physics.ins-det Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors |
url | https://dx.doi.org/10.1016/j.nima.2018.11.009 http://cds.cern.ch/record/2624790 http://cds.cern.ch/record/2624790 |
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