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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume...

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Detalles Bibliográficos
Autores principales: Iguaz, F.J., Balli, F., Barbero, M., Bhat, S., Breugnon, P., Caicedo, I., Chen, Z., Degerli, Y., Godiot, S., Guilloux, F., Guyot, C., Hemperek, T., Hirono, T., Krüger, H., Meyer, J.P., Ouraou, A., Pangaud, P., Rymaszewski, P., Schwemling, P., Vandenbroucke, M., Wang, T., Wermes, N.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2018
Materias:
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.11.009
http://cds.cern.ch/record/2624790
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author Iguaz, F.J.
Balli, F.
Barbero, M.
Bhat, S.
Breugnon, P.
Caicedo, I.
Chen, Z.
Degerli, Y.
Godiot, S.
Guilloux, F.
Guyot, C.
Hemperek, T.
Hirono, T.
Krüger, H.
Meyer, J.P.
Ouraou, A.
Pangaud, P.
Rymaszewski, P.
Schwemling, P.
Vandenbroucke, M.
Wang, T.
Wermes, N.
author_facet Iguaz, F.J.
Balli, F.
Barbero, M.
Bhat, S.
Breugnon, P.
Caicedo, I.
Chen, Z.
Degerli, Y.
Godiot, S.
Guilloux, F.
Guyot, C.
Hemperek, T.
Hirono, T.
Krüger, H.
Meyer, J.P.
Ouraou, A.
Pangaud, P.
Rymaszewski, P.
Schwemling, P.
Vandenbroucke, M.
Wang, T.
Wermes, N.
author_sort Iguaz, F.J.
collection CERN
description This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays).
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institution Organización Europea para la Investigación Nuclear
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publishDate 2018
publisher Nucl. Instrum. Methods Phys. Res., A
record_format invenio
spelling cern-26247902023-04-11T02:40:33Z doi:10.1016/j.nima.2018.11.009 http://cds.cern.ch/record/2624790 eng Iguaz, F.J. Balli, F. Barbero, M. Bhat, S. Breugnon, P. Caicedo, I. Chen, Z. Degerli, Y. Godiot, S. Guilloux, F. Guyot, C. Hemperek, T. Hirono, T. Krüger, H. Meyer, J.P. Ouraou, A. Pangaud, P. Rymaszewski, P. Schwemling, P. Vandenbroucke, M. Wang, T. Wermes, N. Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade physics.ins-det Detectors and Experimental Techniques 6: Novel high voltage and resistive CMOS sensors This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The device used in this work, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pixel flavors with an external injection signal and an iron source (5.9 keV x-rays). This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays). info:eu-repo/grantAgreement/EC/FP7/654168 info:eu-repo/semantics/openAccess Education Level info:eu-repo/semantics/article http://cds.cern.ch/record/2624790 Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A, (2019) pp. 652-653 2018-06-12
spellingShingle physics.ins-det
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Iguaz, F.J.
Balli, F.
Barbero, M.
Bhat, S.
Breugnon, P.
Caicedo, I.
Chen, Z.
Degerli, Y.
Godiot, S.
Guilloux, F.
Guyot, C.
Hemperek, T.
Hirono, T.
Krüger, H.
Meyer, J.P.
Ouraou, A.
Pangaud, P.
Rymaszewski, P.
Schwemling, P.
Vandenbroucke, M.
Wang, T.
Wermes, N.
Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title_full Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title_fullStr Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title_full_unstemmed Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title_short Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
title_sort characterization of a depleted monolithic pixel sensors in 150 nm cmos technology for the atlas inner tracker upgrade
topic physics.ins-det
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
url https://dx.doi.org/10.1016/j.nima.2018.11.009
http://cds.cern.ch/record/2624790
http://cds.cern.ch/record/2624790
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