Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

This work reports on design and performance of a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume...

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Detalles Bibliográficos
Autores principales: Iguaz, F.J., Balli, F., Barbero, M., Bhat, S., Breugnon, P., Caicedo, I., Chen, Z., Degerli, Y., Godiot, S., Guilloux, F., Guyot, C., Hemperek, T., Hirono, T., Krüger, H., Meyer, J.P., Ouraou, A., Pangaud, P., Rymaszewski, P., Schwemling, P., Vandenbroucke, M., Wang, T., Wermes, N.
Formato: info:eu-repo/semantics/article
Lenguaje:eng
Publicado: Nucl. Instrum. Methods Phys. Res., A 2018
Materias:
physics.ins-det
Detectors and Experimental Techniques
6: Novel high voltage and resistive CMOS sensors
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2018.11.009
http://cds.cern.ch/record/2624790

Internet

https://dx.doi.org/10.1016/j.nima.2018.11.009
http://cds.cern.ch/record/2624790

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