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Study of point- and cluster-defects in radiation-damaged silicon
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a significant degradation of sensor performance. In this contribution results from TSC (Thermally Stimulated Current) defect spectroscopy for silicon pad diodes irradiated by electrons to flu...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2018
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2018.04.051 http://cds.cern.ch/record/2633860 |