Beam tests of silicon pixel 3D-sensors developed at SINTEF

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a `3D' electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical...

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Detalles Bibliográficos
Autores principales: Dorholt, O., Hansen, Thor-Erik, Heggelund, A., Kok, A., Pacifico, N., Rohne, O., Sandaker, H., Stugu, B., Yang, Z., Bomben, M., Rummler, A., Weingarten, J.
Lenguaje:eng
Publicado: 2018
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/13/08/P08020
http://cds.cern.ch/record/2634093
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author Dorholt, O.
Hansen, Thor-Erik
Heggelund, A.
Kok, A.
Pacifico, N.
Rohne, O.
Sandaker, H.
Stugu, B.
Yang, Z.
Bomben, M.
Rummler, A.
Weingarten, J.
author_facet Dorholt, O.
Hansen, Thor-Erik
Heggelund, A.
Kok, A.
Pacifico, N.
Rohne, O.
Sandaker, H.
Stugu, B.
Yang, Z.
Bomben, M.
Rummler, A.
Weingarten, J.
author_sort Dorholt, O.
collection CERN
description For the purpose of withstanding very high radiation doses, silicon pixel sensors with a `3D' electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.
id cern-2634093
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2018
record_format invenio
spelling cern-26340932019-09-30T06:29:59Zdoi:10.1088/1748-0221/13/08/P08020http://cds.cern.ch/record/2634093engDorholt, O.Hansen, Thor-ErikHeggelund, A.Kok, A.Pacifico, N.Rohne, O.Sandaker, H.Stugu, B.Yang, Z.Bomben, M.Rummler, A.Weingarten, J.Beam tests of silicon pixel 3D-sensors developed at SINTEFphysics.ins-detDetectors and Experimental TechniquesFor the purpose of withstanding very high radiation doses, silicon pixel sensors with a `3D' electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests shows that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.arXiv:1806.08293oai:cds.cern.ch:26340932018-06-21
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Dorholt, O.
Hansen, Thor-Erik
Heggelund, A.
Kok, A.
Pacifico, N.
Rohne, O.
Sandaker, H.
Stugu, B.
Yang, Z.
Bomben, M.
Rummler, A.
Weingarten, J.
Beam tests of silicon pixel 3D-sensors developed at SINTEF
title Beam tests of silicon pixel 3D-sensors developed at SINTEF
title_full Beam tests of silicon pixel 3D-sensors developed at SINTEF
title_fullStr Beam tests of silicon pixel 3D-sensors developed at SINTEF
title_full_unstemmed Beam tests of silicon pixel 3D-sensors developed at SINTEF
title_short Beam tests of silicon pixel 3D-sensors developed at SINTEF
title_sort beam tests of silicon pixel 3d-sensors developed at sintef
topic physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/13/08/P08020
http://cds.cern.ch/record/2634093
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AT weingartenj beamtestsofsiliconpixel3dsensorsdevelopedatsintef

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