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A simplistic model for reverse annealing in irradiated silicon
Autor principal: | |
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Lenguaje: | eng |
Publicado: |
1994
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/263463 |
_version_ | 1780886443100471296 |
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author | Lutz, Gerhard |
author_facet | Lutz, Gerhard |
author_sort | Lutz, Gerhard |
collection | CERN |
id | cern-263463 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1994 |
record_format | invenio |
spelling | cern-2634632019-09-30T06:29:59Zhttp://cds.cern.ch/record/263463engLutz, GerhardA simplistic model for reverse annealing in irradiated siliconDetectors and Experimental TechniquesMPI-PhE-94-10oai:cds.cern.ch:2634631994 |
spellingShingle | Detectors and Experimental Techniques Lutz, Gerhard A simplistic model for reverse annealing in irradiated silicon |
title | A simplistic model for reverse annealing in irradiated silicon |
title_full | A simplistic model for reverse annealing in irradiated silicon |
title_fullStr | A simplistic model for reverse annealing in irradiated silicon |
title_full_unstemmed | A simplistic model for reverse annealing in irradiated silicon |
title_short | A simplistic model for reverse annealing in irradiated silicon |
title_sort | simplistic model for reverse annealing in irradiated silicon |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/263463 |
work_keys_str_mv | AT lutzgerhard asimplisticmodelforreverseannealinginirradiatedsilicon AT lutzgerhard simplisticmodelforreverseannealinginirradiatedsilicon |