Combining TCAD and Monte Carlo Methods to Simulate High-Resistivity CMOS Pixel Detectors using the Allpix2 Framework

For the research and development (R&D) of new silicon sensor technology, simulations of silicon detectors are a vital tool for determining their characteristics and performance. Simulations furthermore complement and help to understand experiments conducted on silicon sensors. In this project electrostatic field simulations with TCAD are combined with a Monte Carlo method with the Allpix2 in order to determine the properties of an High-Resistivity CMOS silicon sensor. The simulation is validated against test beam data and the performance of the silicon detector is assessed.